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GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

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© The Institution of Electrical Engineers
Published

A GaAs/AIGaAs staircase SAM-APD containing a 10 stage undoped staircase multiplication region is demonstrated. Doping dipoles were inserted in GaAs/Al0.45Ga0.55As interfaces to increase the effective conduction band offset. Typical dark current at 0.9VB was 70pA. The maximum avalanche gain of 1500 was measured near the onset of breakdown. An effective ionisation rate ratio kaff = 0.2 was obtained from multiplication noise measurements.

Inspec keywords: semiconductor doping; III-V semiconductors; avalanche photodiodes; impact ionisation; aluminium compounds; gallium arsenide

Other keywords: delta-doped staircase; undoped staircase multiplication region; SAM type; effective conduction band offset; avalanche photodiode; GaAs-Al0.45Ga0.55As; multiplication noise measurements; separated absorption layer; doping dipoles insertion

Subjects: Photoelectric devices

References

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