The crystal growth and dissolution kinetics of a flat surface has been studied using the kinetic lsing model and the Monte Carlo method. In the high temperature range studied the surface was rough and nucleation is not required for growth and dissolution. The rate constants were determined unambiguously from the linear dependence of the growth and dissolution rate on the relative distance from equilibrium σ. The kinetics were found to be faster for growth, consistent with previous published results at low temperature. In the absence of surface diffusion the Frenkel–Wilson kinetic limit (i.e. the independence of rate on temperature) for dissolution was also found to occur at a higher temperature. The Arrhenius activation energy for the slower dissolution was found to be larger. However, when surface diffusion is incorporated into the simulation, this new rate-determining step increases the rate of both growth and dissolution. At x_s= 1.0, the E_a values of both growth and dissolution were found to be reduced, but the dissolution E_a was reduced to a smaller extent. At x_s= 2.0, an artificially large value for the given surface kinetic symmetry was observed. Both growth and dissolution rates were also found to have surpassed the high-temperature limit of Frenkl and Wilson.