* Corresponding authors

^a School of Microelectronics, Xidian University, Xi'an 710071, China

^b China Electronics Technology Group Corporation 29th Research Institute, Sichuan Broadband Microwave Circuit High Density Integration Engineering Research Center, Chengdu 610036, China

^c School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Southwest Institute of Applied Magnetism, Mianyang 621010, China

^d Joint Laboratory for Extreme Conditions Matter Properties, School of Mathematics and Physics, Southwest University of Science and Technology, Sichuan Civil-military Integration Institute, Mianyang 621010, China
E-mail: zw-xiong@swust.edu.cn

^e Institute of Physics Nuclear and Chemistry, China Academy of Engineering Physics, Mianyang, China

^f School of Physics and Electronic Information, Gannan Normal University, Ganzhou 341000, China

^g Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China
E-mail: z.p.gao@foxmail.com