Issue 7, 2023
From the journal:

Nanoscale

Correction: Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping

Olga Arroyo-Gascón,ab   Yuriko Baba,b   Jorge I. Cerdá,a   Oscar de Abril,c   Ruth Martínez-Casado,b   Francisco Domínguez-Adameb  and  Leonor Chico*ab  

* Corresponding authors

a Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, C/Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
E-mail: leochico@ucm.es

b GISC, Departamento de Física de Materiales, Universidad Complutense, E-28040 Madrid, Spain

c Departamento de Estructuras y Física de Edificación, Universidad Politécnica de Madrid, E-28040 Madrid, Spain

Abstract

Correction for ‘Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping’ by Olga Arroyo-Gascón et al., Nanoscale, 2022, 14, 7151–7162, https://doi.org/10.1039/D1NR07120C.

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Article information

DOI
https://doi.org/10.1039/D3NR90008H
Article type
Correction
Submitted
11 Jan 2023
Accepted
11 Jan 2023
First published
25 Jan 2023
This article is Open Access
Creative Commons BY license

Nanoscale, 2023,15, 3566-3566

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Correction: Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping

O. Arroyo-Gascón, Y. Baba, J. I. Cerdá, O. de Abril, R. Martínez-Casado, F. Domínguez-Adame and L. Chico, Nanoscale, 2023, 15, 3566 DOI: 10.1039/D3NR90008H

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