Unidirectional growth of epitaxial tantalum disulfide triangle crystals grown on sapphire by chemical vapour deposition with a separate-flow system

Takashi Yanase; Miu Ebashi; Kotaro Takamure; Wataru Ise; Hiroki Waizumi; Akira Chikamatsu; Yasushi Hirose; Toshihiro Shimada

doi:10.1039/D3CE00906H

Unidirectional growth of epitaxial tantalum disulfide triangle crystals grown on sapphire by chemical vapour deposition with a separate-flow system†

Takashi Yanase,

*^a Miu Ebashi,^a Kotaro Takamure,^b Wataru Ise,^c Hiroki Waizumi,^c Akira Chikamatsu,

^d Yasushi Hirose

^e and Toshihiro Shimada

^c

Author affiliations

* Corresponding authors

^a Department of Chemistry, Faculty of Science, Toho University, 2-2-1 Miyama, Funabashi, Chiba 274-8510, Japan
E-mail: takashi.yanase@sci.toho-u.ac.jp

^b Institute of Materials and Systems for Sustainability, Division of Materials Research, Nagoya University, Furocho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan

^c Division of Applied Chemistry, Faculty of Engineering, Hokkaido University, Kita 13 Nishi 8 Kita-ku, Sapporo, Hokkaido 060-8628, Japan

^d Department of Chemistry, Faculty of Science, Ochanomizu University, 2-1-1 Otsuka, Bunkyo-ku, Tokyo 112-8610, Japan

^e Department of Chemistry, Graduate School of Science, Tokyo Metropolitan University, 1-1 Minamiosawa Hachioji, Tokyo 192-0397, Japan

Abstract

Tantalum disulfide has been attracting considerable attention due to its rich phase diagram that includes polytypes and charge density waves, thus having potential for electrical device applications. However, epitaxial TaS₂ thin films grown by chemical vapour deposition are still limited due to few available precursors. Herein, an originally designed atmospheric chemical vapour deposition with a separate-flow system was proposed to accomplish the controlled synthesis of TaS₂ thin films. The sophisticated deposition sequence enables us to make unidirectional TaS₂ triangle domains on c-plane sapphire using a chloride precursor. The quality of the grown TaS₂ thin films was confirmed by X-ray diffraction, Raman spectroscopy, transmission electron microscopy and observing a step-and-terrace structure without spiral defects. The growth mechanism was discussed and concluded as the Volmer–Weber mode from the surface morphologies and elemental analysis. Our strategy is expandable to the other transition metal dichalcogenides because all the chloride precursors show a considerable vapour pressure below 200 °C.

CrystEngComm

Unidirectional growth of epitaxial tantalum disulfide triangle crystals grown on sapphire by chemical vapour deposition with a separate-flow system†

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Unidirectional growth of epitaxial tantalum disulfide triangle crystals grown on sapphire by chemical vapour deposition with a separate-flow system

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