Issue 23, 2022
From the journal:

Nanoscale Advances

Strain engineering of graphene on rigid substrates†

Yang Zhang,a   Yanhan Jin,a   Jinglan Liu,a   Qiancheng Ren,a   Zhengyang Chen,b   Yi Zhaob  and  Pei Zhao ORCID logo *ac  

* Corresponding authors

a Center for X-Mechanics and Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027, P. R. China
E-mail: peizhao@zju.edu.cn

b College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China

c State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou, P. R. China

Abstract

Graphene with a large tensile strain is a promising candidate for the new “straintronics'’ applications. The current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates. In this work, a novel method for strained graphene on a rigid substrate assisted by PDMS stretching and interface adjustments is proposed. The Raman spectra show that the maximum strain of graphene on the SiO2/Si substrate is ∼1.5%, and multiple characterizations demonstrate its high cleanness, flatness, integrity, and reliable electrical performance. The successful strain engineering is attributed to the protection of a layer of formvar resin and the interfacial capillary force of the buffering liquid. We believe this technique can advance strain-related fundamental studies and applications of two-dimensional materials.

Graphical abstract: Strain engineering of graphene on rigid substrates

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Article information

DOI
https://doi.org/10.1039/D2NA00580H
Article type
Paper
Submitted
29 Aug 2022
Accepted
05 Oct 2022
First published
12 Oct 2022
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2022,4, 5056-5061

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Strain engineering of graphene on rigid substrates

Y. Zhang, Y. Jin, J. Liu, Q. Ren, Z. Chen, Y. Zhao and P. Zhao, Nanoscale Adv., 2022, 4, 5056 DOI: 10.1039/D2NA00580H

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