Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures

Xiao Fu; Tangxin Li; Qing Li; Chunhui Hao; Lei Zhang; Dejun Fu; Jinjin Wang; Hangyu Xu; Yue Gu; Fang Zhong; Ting He; Kun Zhang; Gennady N. Panin; Wei Lu; Jinshui Miao; Weida Hu

doi:10.1039/D2MH00872F

Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures†

Xiao Fu,‡^abc Tangxin Li,‡^bc Qing Li,‡^abc Chunhui Hao,^ac Lei Zhang,

^d Dejun Fu,^e Jinjin Wang,^bc Hangyu Xu,^bc Yue Gu,^bc Fang Zhong,^abc Ting He,^abc Kun Zhang,^bcf Gennady N. Panin,

*^g Wei Lu,^abc Jinshui Miao*^abc and Weida Hu

*^abc

Author affiliations

* Corresponding authors

^a School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

^b State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

^c University of Chinese Academy of Sciences, Beijing 100049, China

^d Ministry of Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China

^e Innovation Center of Research Institute of Tsinghua University in Zhuhai, Zhuhai 519000, China

^f School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

^g Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow 142432, Russia

Abstract

The functional diversities of two-dimensional (2D) material devices with simple architectures are ultimately limited by immature doping techniques. An alternative strategy is to use geometry-asymmetric metal–semiconductor–metal (GA-MSM) structures, which enable the basic functions of semiconductor junctions such as rectification and photovoltaics. Here, the mixed-dimensional van der Waals heterostructures (MDvdWHs) based on the separation and self-assembly of p-type SnS layered nanosheets (NSs) and n-type SnS₂ nanoparticles (NPs) are obtained using an aqueous phase exfoliation (APE) method. Due to the surface charge transfer doping, the carrier transport mechanism of devices based on MDvdWHs turns from thermionic field emission (TFE) to thermionic emission (TE), with the rectification factor (I_forward/I_reverse) changing from 0.7 to 3. To further illustrate the experimental results, the generic current transport models of GA-MSM devices have been established based on the TE and TFE mechanisms in which the TE and TFE mechanisms lead to opposite rectification phenomena in good agreement with the experimental results. The GA-MSM devices show a photovoltaic effect with a high responsivity of 35 A W⁻¹ and detectivity of 3.4 × 10¹¹ cm Hz^1/2 W⁻¹. This study not only provides a novel strategy to design photovoltaic devices with MDvdWHs, but more importantly, we have established fundamental models for the rectification behavior of GA-MSM devices.

Materials Horizons

Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures†

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Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures

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