Dual-functional carbon-doped polysilicon films for passivating contact solar cells: regulating physical contacts while promoting photoelectrical properties

Yiran Lin; Zhenhai Yang; Zunke Liu; Jingming Zheng; Mengmeng Feng; Yuyan Zhi; Linna Lu; Mingdun Liao; Wei Liu; Dian Ma; Qingling Han; Hao Cheng; Qiaoshi Zeng; Zhizhong Yuan; Baojie Yan; Yuheng Zeng; Jichun Ye

doi:10.1039/D1EE02011K

Dual-functional carbon-doped polysilicon films for passivating contact solar cells: regulating physical contacts while promoting photoelectrical properties†

Yiran Lin,‡^ab Zhenhai Yang,‡*^ac Zunke Liu,^a Jingming Zheng,^a Mengmeng Feng,^a Yuyan Zhi,^a Linna Lu,^a Mingdun Liao,^a Wei Liu,^a Dian Ma,^a Qingling Han,^a Hao Cheng,^a Qiaoshi Zeng,

^d Zhizhong Yuan,^b Baojie Yan,^a Yuheng Zeng*^a and Jichun Ye

*^a

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* Corresponding authors

^a Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo 315201, China
E-mail: yangzhenhai@nimte.ac.cn, yuhengzeng@nimte.ac.cn, jichun.ye@nimte.ac.cn

^b School of Materials Science & Engineering, Jiangsu University, Zhenjiang City, China

^c Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, The University of Nottingham Ningbo China, Ningbo 315100, China

^d Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China

Abstract

Passivating contact crystalline silicon solar cells are among the most promising industrially feasible photovoltaic (PV) technologies and require excellent physical contacts to handle device performance. Here, we report a versatile polysilicon (poly-Si) film intentionally doped with carbon (C) to suppress blistering and improve physical contacts. Our investigations of blistering mechanisms reveal that the reduced crystallization fraction of poly-Si in conjunction with the suppressed level of hydrogen release should primarily be responsible for the blistering-free appearance of the C-doped poly-Si films. Moreover, additional advantages of high-quality passivation with a high implied open-circuit voltage (iV_oc) exceeding 750 mV and an excellent optical response in the infrared band with a net current-density gain of 0.31 mA cm⁻² are endowed to the C-doped poly-Si films. Consequently, the proof-of-concept devices featuring C-doping show a champion efficiency of 24.27%, which is 1.18% higher than that of the C-free counterparts (23.09%). Also, we present a certified efficiency of 23.82%, suggesting that the C-doped poly-Si has the potential to achieve high-efficiency c-Si solar cells.

Energy & Environmental Science

Dual-functional carbon-doped polysilicon films for passivating contact solar cells: regulating physical contacts while promoting photoelectrical properties†

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