Stable growth of (Ce,Gd)3Ga2Al3O12 crystal scintillators by the traveling solvent floating zone method

Tong Wu; Ling Wang; Yun Shi; Xintang Huang; Tianzhao Xu; Hui Wang; Jinghong Fang; Jinqi Ni; Huan He; Chaoyue Wang; Zhenzhen Zhou; Qian Liu; Bo Wan; Qin Li; Jianding Yu; Mei Yang; Huanying Li; Yuntao Wu; Oleg Shichalin; E. K. Papynov

doi:10.1039/D1CE01617B

Stable growth of (Ce,Gd)₃Ga₂Al₃O₁₂ crystal scintillators by the traveling solvent floating zone method

Tong Wu,^ab Ling Wang,^ab Yun Shi,

*^ac Xintang Huang,

*^b Tianzhao Xu,^ac Hui Wang,^a Jinghong Fang,^a Jinqi Ni,^a Huan He,^a Chaoyue Wang,^a Zhenzhen Zhou,^a Qian Liu,^a Bo Wan,^de Qin Li,^a Jianding Yu,^ac Mei Yang,^d Huanying Li,^d Yuntao Wu,^d Oleg Shichalin^f and E. K. Papynov^f

Author affiliations

* Corresponding authors

^a State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
E-mail: shiyun@mail.sic.ac.cn

^b College of Physical Science and Technology, Central China Normal University, Wuhan 430079, China
E-mail: xthuang@mail.ccnu.edu.cn

^c Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China

^d Artificial Crystal Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China

^e Department of Energy Storage and Conversion, Technical University of Denmark, Kongens Lyngby 2800, Denmark

^f Far Eastern Federal University, Vladivostok 690091, Russian

Abstract

Ce_0.03Gd_2.97Ga₂Al₃O₁₂ (Ce:GGAG) single crystals were successfully grown by the traveling solvent floating zone method (TSFZ). A series of compositions, where the mole ratio is Gd₂O₃ : Al₂O₃ = 25 : 75, 27 : 73, 29 : 71, were investigated as solvents. The 25 mol% Gd₂O₃-75 mol% Al₂O₃ solvent component was found to be the most effective in stabilizing the molten zone to obtain a crystal rod with uniform diameter. The crystal cracks were relieved clearly due to the improved molten zone stabilization during the crystal growth process. XRD patterns of the obtained crystals prove the garnet structure without any evident second phase. The characteristic Ce³⁺ emission located at around 540 nm was presented in the photoluminescence and X-ray excited luminescence spectra. The scintillation light yield reaches up to 34 132 pho MeV⁻¹ and scintillation decay time was optimized to 64 ns with a high fast decay component of about 85%. The TSFZ method demonstrated the growth feasibility of Ce:GGAG crystals that have an incongruent-melting trend with lower Ga/Al ratio in the compositions.

CrystEngComm

Stable growth of (Ce,Gd)₃Ga₂Al₃O₁₂ crystal scintillators by the traveling solvent floating zone method

Abstract

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Stable growth of (Ce,Gd)₃Ga₂Al₃O₁₂ crystal scintillators by the traveling solvent floating zone method

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