Issue 6, 2020

Tuning the photocatalytic water-splitting capability of two-dimensional α-In2Se3 by strain-driven band gap engineering

Abstract

In this work, we have investigated the effects of in-plane mechanical strains on the electronic properties of single-layer α-In2Se3 by means of density functional theory (DFT) calculations. Our findings reveal that this system exhibits a semiconductor character with an indirect band gap in the ground state, with a compressive biaxial strain leading to an indirect to direct band gap transition. Remarkably, along with the band gap transition, the system displays promising capability to produce hydrogen gas from a visible light photocatalytic water splitting process.

Graphical abstract: Tuning the photocatalytic water-splitting capability of two-dimensional α-In2Se3 by strain-driven band gap engineering

Article information

Article type
Paper
Submitted
05 Nov 2019
Accepted
17 Jan 2020
First published
20 Jan 2020

Phys. Chem. Chem. Phys., 2020,22, 3520-3526

Tuning the photocatalytic water-splitting capability of two-dimensional α-In2Se3 by strain-driven band gap engineering

E. F. Procopio, R. N. Pedrosa, F. A. L. de Souza, W. S. Paz and W. L. Scopel, Phys. Chem. Chem. Phys., 2020, 22, 3520 DOI: 10.1039/C9CP06023E

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