Issue 45, 2017

Spin-dependent electron transport in C and Ge doped BN monolayers

Abstract

Recent advances in the synthesis and characterization of h-BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the lattice. In this paper, we consider a h-BN monolayer doped with C or Ge, and find that dopants modify the Fermi level of the pristine monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. These modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and spin-dependent current. We find that the spin-polarized transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.

Graphical abstract: Spin-dependent electron transport in C and Ge doped BN monolayers

Supplementary files

Article information

Article type
Paper
Submitted
16 Aug 2017
Accepted
27 Oct 2017
First published
30 Oct 2017

Phys. Chem. Chem. Phys., 2017,19, 30370-30380

Spin-dependent electron transport in C and Ge doped BN monolayers

S. K. Gupta, H. He, I. Lukačević and R. Pandey, Phys. Chem. Chem. Phys., 2017, 19, 30370 DOI: 10.1039/C7CP05596J

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