A p-type Cr-doped TiO2 photo-electrode for photo-reduction

Junyu Cao; Yuanjian Zhang; Lequan Liu; Jinhua Ye

doi:10.1039/C3CC40394G

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A p-type Cr-doped TiO₂ photo-electrode for photo-reduction†

Junyu Cao,^a Yuanjian Zhang,^b Lequan Liu^c and Jinhua Ye*^acd

Author affiliations

* Corresponding authors

^a Environmental Remediation Materials Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, Japan
E-mail: Jinhua.YE@nims.go.jp

^b School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, P. R. China

^c International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, Japan

^d TU-NIMS Joint Research Center, School of Materials Science and Engineering, Tianjin University, Tianjin, P. R. China

Abstract

A p-type Cr-doped TiO₂ photo-electrode is fabricated using a pulsed laser deposition method on a Sn doped indium-oxide-coated glass sheet (ITO). The p-type properties of the as-prepared Cr-doped TiO₂ photo-electrode are suggested to be attributed to unique substitutional Cr⁴⁺ doping in the TiO₂ lattice.

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Supplementary files

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Article information

DOI: https://doi.org/10.1039/C3CC40394G
Article type: Communication
Submitted: 17 Jan 2013
Accepted: 06 Mar 2013
First published: 07 Mar 2013

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Chem. Commun., 2013,49, 3440-3442

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A p-type Cr-doped TiO₂ photo-electrode for photo-reduction

J. Cao, Y. Zhang, L. Liu and J. Ye, Chem. Commun., 2013, 49, 3440 DOI: 10.1039/C3CC40394G

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Chemical Communications