Issue 9, 2012
From the journal:

Analyst

Thickness dependent sensing mechanism in sorted semi-conducting single walled nanotube based sensors

Yann Battie,*a   Louis Gorintin,b   Olivier Ducloux,c   Philippe Thobois,c   Paolo Bondavalli,b   Gilles Feugnetb  and  Annick Loiseaua  

* Corresponding authors

a LEM ONERA-CNRS UMR 104, 29 Av. de la Division Leclerc, 92322 Châtillon, France
E-mail: annick.loiseau@onera.fr
Fax: +33 14673 4155
Tel: +33 14673 4599

b Thales RT UMR137, 91767 Palaiseau, France

c DMPH ONERA-CNRS, 29 Av. de la Division Leclerc, 92322 Châtillon, France

Abstract

Single walled carbon nanotube (SWCNT) networks present outstanding potential for the development of SWCNT-based gas sensors. Due to the complexity of the transport properties of this material, the physical mechanisms at stake during exposure to gas are still under debate. Previously suggested mechanisms are charge transfer between gas molecules and SWCNT and Schottky barrier modulation. By comparing electrical measurements with an analytical model based on Schottky barrier modulation, we demonstrate that one mechanism or the other is predominant depending on the percolation of metallic carbon nanotubes. Below the metallic SWCNT percolation threshold, sensing is dominated by the modulation of the Schottky barrier, while above this threshold, it is only attributed to a charge transfer between SWCNT and gas molecules. Both mechanisms are discussed in terms of sensitivity and resolution leading to routes for the optimization of a gas sensor architecture based on highly enriched semiconducting carbon nanotube films.

Graphical abstract: Thickness dependent sensing mechanism in sorted semi-conducting single walled nanotube based sensors

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Article information

DOI
https://doi.org/10.1039/C2AN15949J
Article type
Paper
Submitted
10 Oct 2011
Accepted
10 Feb 2012
First published
13 Mar 2012

Analyst, 2012,137, 2151-2157

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Thickness dependent sensing mechanism in sorted semi-conducting single walled nanotube based sensors

Y. Battie, L. Gorintin, O. Ducloux, P. Thobois, P. Bondavalli, G. Feugnet and A. Loiseau, Analyst, 2012, 137, 2151 DOI: 10.1039/C2AN15949J

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