Issue 16, 2011
From the journal:

CrystEngComm

Growth of AlN hexagonal oriented complex nanostructures induced by nucleus arrangement

Xu Ji,a   Huajun Li,a   Zhiguo Wu,*a   Shuang Cheng,a   Hairong Hu,a   De Yan,a   Renfu Zhuo,a   Jun Wanga  and  Pengxun Yan*ab  

* Corresponding authors

a Lanzhou University, School of Physical Science and Technology, Lanzhou University, Lanzhou City, Gansu Province, China
E-mail: zgwu@lzu.edu.cn, pxyan@lzu.edu.cn.
Fax: +86-931-8913554
Tel: +86-931-8912719

b Chinese Academy of Science, School of Physical Science and Technology, Lanzhou University, Lanzhou City, Gansu Province, China

Abstract

Growth of AlN hexagonal oriented complex nanostructures were induced by nucleus arrangement under certain conditions in a simple one step halide chemical vapor deposition (HCVD) system. The as-prepared AlN nanostructures obtained at different positions from the Al source involve nanomaze, hexagonal nested arrays, hexagonal nanorod arrays with a small pit on the top of each rod and nanoparticle films, respectively. A relevant growth mechanism was suggested and interpreted in detail with a focus on the “nucleus arrangement” combined with preferential growth. Observations of nucleus arrangement events certify the rationality of this mechanism. We found that the variable ratio of AlCl3/NH3 offers the power to mediate the arrangement of nucleus and crystal growth. There are some differences between the nucleus arrangement mechanism that we put forward here in the HCVD system and the oriented attachment that occurs in solution, because the former possesses a shorter mean free path of the nucleus.

Graphical abstract: Growth of AlN hexagonal oriented complex nanostructures induced by nucleus arrangement

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Article information

DOI
https://doi.org/10.1039/C1CE05293D
Article type
Paper
Submitted
08 Mar 2011
Accepted
23 May 2011
First published
29 Jun 2011

CrystEngComm, 2011,13, 5198-5203

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Growth of AlN hexagonal oriented complex nanostructures induced by nucleus arrangement

X. Ji, H. Li, Z. Wu, S. Cheng, H. Hu, D. Yan, R. Zhuo, J. Wang and P. Yan, CrystEngComm, 2011, 13, 5198 DOI: 10.1039/C1CE05293D

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