A shock tube study of the reaction of Si atoms with HCl
Abstract
The reaction of Si atoms with HCl was studied behind reflected shock waves at temperatures between 1500 and 2850 K and pressures around 1.4 bar. Atomic resonance absorption spectroscopy (ARAS) was applied for time-resolved measurement of Si and Cl atoms. Si atoms were produced by the thermal decomposition of SiH4 and Si2H6, respectively. HCl being present in excess causes a rapid consumption of Si atoms, which follows a pseudo-first-order rate law. The reaction channel and the rate coefficient for the reaction of Si atoms with HCl was determined to be:
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