Influence of cooling-induced edge morphology evolution during chemical vapor deposition on H2 etching of graphene domains

Bin Wang; Yuwei Wang; Guiqiang Wang; Qingguo Zhang

doi:10.1039/C8RA09265F

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Influence of cooling-induced edge morphology evolution during chemical vapor deposition on H₂ etching of graphene domains†

Bin Wang,

^a Yuwei Wang,^b Guiqiang Wang^a and Qingguo Zhang*^a

Author affiliations

* Corresponding authors

^a College of New Energy, Bohai University, 19, Keji Rd., New Songshan District, Jinzhou City, Liaoning Province, China
E-mail: wgqem@bhu.edu.cn

^b Department of Chemistry and Environmental Sciences, Jinzhou Normal College, 189, Songpo Rd., Linghe District, Jinzhou City, Liaoning Province, China

Abstract

In this paper, we studied the influence of edge morphology evolution during the chemical vapor deposition cooling process on H₂ etching of graphene domains. Hexagonal graphene domains were synthesized on a Cu substrate and etched with H₂ at atmospheric pressure. After etching, two kinds of graphene edge morphologies were observed, which were closely associated with the cooling process. A visible curvature was observed at the graphene edges via an atomic force microscope, indicating that the graphene edges sank into the Cu surface during the cooling process, which protected the graphene edges from etching. This work demonstrates the changes in graphene edges during cooling and sheds light on the etching mechanism of graphene edges on a Cu substrate.

This article is part of the themed collection: Editors’ collection: Graphene

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Article information

DOI: https://doi.org/10.1039/C8RA09265F
Article type: Paper
Submitted: 09 Nov 2018
Accepted: 28 Jan 2019
First published: 18 Feb 2019
This article is Open Access

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RSC Adv., 2019,9, 5865-5869

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Influence of cooling-induced edge morphology evolution during chemical vapor deposition on H₂ etching of graphene domains

B. Wang, Y. Wang, G. Wang and Q. Zhang, RSC Adv., 2019, 9, 5865 DOI: 10.1039/C8RA09265F

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