A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe16S20]8− layer and reduced thermal conductivity

Min Wu; Jessica Rhee; Thomas J. Emge; Hongbin Yao; Jen-Hau Cheng; Suraj Thiagarajan; Mark Croft; Ronggui Yang; Jing Li

doi:10.1039/B920118A

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A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe₁₆S₂₀]⁸⁻ layer and reduced thermal conductivity†

Min Wu,^a Jessica Rhee,^a Thomas J. Emge,^a Hongbin Yao,^a Jen-Hau Cheng,^b Suraj Thiagarajan,^b Mark Croft,^c Ronggui Yang^b and Jing Li*^a

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* Corresponding authors

^a Department of Chemistry and Chemical Biology Rutgers University, Piscataway, USA
E-mail: jingli@rutgers.edu
Fax: (+01)732-445-5312

^b Department of Mechanical Engineering University of Colorado at Boulder, Boulder, USA

^c Department of Physics and Astronomy Rutgers University, Piscataway, USA

Abstract

A low band gap iron sulfide hybrid semiconductor with unique layered structure and unusual iron coordination exhibits significantly reduced thermal conductivity.

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Article information

DOI: https://doi.org/10.1039/B920118A
Article type: Communication
Submitted: 28 Sep 2009
Accepted: 22 Jan 2010
First published: 06 Feb 2010

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Chem. Commun., 2010,46, 1649-1651

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A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe₁₆S₂₀]⁸⁻ layer and reduced thermal conductivity

M. Wu, J. Rhee, T. J. Emge, H. Yao, J. Cheng, S. Thiagarajan, M. Croft, R. Yang and J. Li, Chem. Commun., 2010, 46, 1649 DOI: 10.1039/B920118A

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