Large-scale 2D PbI2 monolayers: experimental realization and their indirect band-gap related properties

Mianzeng Zhong; Shuai Zhang; Le Huang; Jingbi You; Zhongming Wei; Xinfeng Liu; Jingbo Li

doi:10.1039/C6NR07924E

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Large-scale 2D PbI₂ monolayers: experimental realization and their indirect band-gap related properties†

Mianzeng Zhong,

‡^a Shuai Zhang,‡^bc Le Huang,^a Jingbi You,^a Zhongming Wei,

*^a Xinfeng Liu*^b and Jingbo Li*^a

Author affiliations

* Corresponding authors

^a Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
E-mail: zmwei@semi.ac.cn, jbli@semi.ac.cn

^b CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
E-mail: liuxf@nanoctr.cn

^c School of Physics and Electronics, Shandong Normal University, Jinan 250014, China

Abstract

Large-scale PbI₂ monolayers and few layers with high crystallinity and a uniform hexagonal shape were synthesized via a facile physical vapour deposition (PVD) method. The transition from a direct band-gap in the bulk to an indirect band-gap in the monolayer is verified by photoluminescence (PL) spectra, optoelectronic properties, and first principle calculations.

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Article information

DOI: https://doi.org/10.1039/C6NR07924E
Article type: Communication
Submitted: 09 Oct 2016
Accepted: 04 Jan 2017
First published: 05 Jan 2017

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Nanoscale, 2017,9, 3736-3741

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Large-scale 2D PbI₂ monolayers: experimental realization and their indirect band-gap related properties

M. Zhong, S. Zhang, L. Huang, J. You, Z. Wei, X. Liu and J. Li, Nanoscale, 2017, 9, 3736 DOI: 10.1039/C6NR07924E

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