Issue 8, 2014

Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

Abstract

We report on an interdiffusion method to fabricate pin-hole free perovskite films using a low temperature (<105 °C) solution process. A high efficiency of 15.4%, with a fill factor of ∼80%, was achieved for the devices under one sun illumination. The interdiffusion method results in high device yield, with an efficiency of above 14.5% for more than 85% of the devices.

Graphical abstract: Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

Supplementary files

Article information

Article type
Communication
Submitted
11 Apr 2014
Accepted
19 May 2014
First published
20 May 2014

Energy Environ. Sci., 2014,7, 2619-2623

Author version available

Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

Z. Xiao, C. Bi, Y. Shao, Q. Dong, Q. Wang, Y. Yuan, C. Wang, Y. Gao and J. Huang, Energy Environ. Sci., 2014, 7, 2619 DOI: 10.1039/C4EE01138D

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