SCHEDULED MAINTENANCE
Nanofabrication of TaS2 conducting layers nanopatterned with Ta2O5 insulating regions via AFM†
Abstract
It is demonstrated how local oxidation nanolithography performed with an atomic force microscope (AFM-LON) may be successfully employed for the nanopatterning of insulating regions of Ta2O5 on TaS2 ultrathin metallic layers. This provides a simple approach for the fabrication of electronic devices, such as single-electron transistors, at the nanoscale.
- This article is part of the themed collection: Fabrication technology of nanomaterials
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