Semiconducting behavior of type-I Si clathrate K8Ga8Si38

Motoharu Imai; Akira Sato; Haruhiko Udono; Yoji Imai; Hiroyuki Tajima

doi:10.1039/C1DT10071H

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Semiconducting behavior of type-I Si clathrate K₈Ga₈Si₃₈†

Motoharu Imai,*^a Akira Sato,^b Haruhiko Udono,^c Yoji Imai^d and Hiroyuki Tajima^e

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* Corresponding authors

^a National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, Japan
E-mail: IMAI.Motoharu@nims.go.jp
Fax: 81 29 859 2801
Tel: 81 29 859 2814

^b National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, Japan

^c College of Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki, Japan

^d National Institute for Advanced Industrial Science and Technology, AIST Tsukuba Central 5, Higashi 1-1, Tsukuba, Ibaraki, Japan

^e Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, Japan

Abstract

A ternary type-I Si clathrate K₈Ga₈Si₃₈ has been revealed to be an indirect band gap semiconducting material with an energy gap (E_g) of approximately 0.10 eV, which is much smaller than the calculated E_g value that is 0.15 eV wider than E_g of elemental Si with the diamond-type structure.

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Article information

DOI: https://doi.org/10.1039/C1DT10071H
Article type: Communication
Submitted: 14 Jan 2011
Accepted: 18 Feb 2011
First published: 08 Mar 2011

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Dalton Trans., 2011,40, 4045-4047

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Semiconducting behavior of type-I Si clathrate K₈Ga₈Si₃₈

M. Imai, A. Sato, H. Udono, Y. Imai and H. Tajima, Dalton Trans., 2011, 40, 4045 DOI: 10.1039/C1DT10071H

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Dalton Transactions