Sandwich structured (Bi_0.92La_0.08)(Fe_0.87Zn_0.13)O₃/(Bi_0.92La_0.08)(Fe_0.93Zn_0.07)O₃/(Bi_0.92La_0.08)(Fe_0.87Zn_0.13)O₃ thin films were prepared on Pt/TiO₂/SiO₂/Si(100) substrates by radio frequency sputtering. High (110) orientation is induced in these sandwiched structures due to the introduction of the bottom (Bi_0.92La_0.08)(Fe_0.87Zn_0.13)O₃ layer with a (110) orientation. The space–charge-limited current mechanism is identified to dominate the leakage behavior of these sandwiched structures, and the lowest leakage current density is well established in such a sandwiched structure with a thickness ratio of 1 : 1 : 1 owing to its denser microstructure. All sandwiched structures demonstrate good fatigue behavior at a switching cycle of ∼2.96 × 10⁹ and similar saturated M–H loops with 2M ∼ 15.5 emu cm⁻³ due to the interface coupling among these constituent layers. The sandwiched structure with a thickness ratio of 1 : 1 : 1 possesses a better P–E loop with a high remanent polarization of 2P_r ∼ 142.6 μC cm⁻² and a low coercive field of 2E_c ∼ 695.0 kV cm⁻¹. As a result, the sandwiched structure is an effective way to improve the multiferroic and fatigue behavior of bismuth ferrite materials.