Issue 20, 2009

Selective metal deposition for a structure with a thin intermediate layer on a photochromic diarylethene film

Abstract

Selective metal Mg deposition was achieved for a structure with the 8-nm-thick intermediate layer of Alq3 on a photochromic diarylethene (DAE) layer. Selective deposition for a structure with the Alq3 intermediate layer was attributed to uncolored DAE molecules exposed on the surface due to the migration and the aggregation of Alq3 molecules on the uncolored DAE layer. Laser spot irradiation enables both isomerization and an annealing effect on samples with an Alq3 intermediate layer, thereby achieving selective Mg deposition. Selective deposition for a structure with an intermediate layer could be important for the preparation of patterned cathodes in the field of organic electronics.

Graphical abstract: Selective metal deposition for a structure with a thin intermediate layer on a photochromic diarylethene film

Article information

Article type
Paper
Submitted
14 Nov 2008
Accepted
04 Mar 2009
First published
31 Mar 2009

J. Mater. Chem., 2009,19, 3176-3180

Selective metal deposition for a structure with a thin intermediate layer on a photochromic diarylethene film

K. Masui, R. Takagi, Y. Sesumi, S. Nakamura and T. Tsujioka, J. Mater. Chem., 2009, 19, 3176 DOI: 10.1039/B820408J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements