Issue 2, 2023

Ultraviolet-driven metal oxide semiconductor synapses with improved long-term potentiation

Abstract

Approaching the limit of Moore's law has presented an urgent challenge for computing hardware innovation, for which a bio-inspired in-memory computing configuration can offer great potential for next-generation hardware of artificial intelligence. A multiterminal synaptic transistor has been widely regarded as an ideal platform to integrate computing capability with memory function. Among the aspects of exploring the artificial equivalence of bio-neural systems, it is essential to realize long-memory retention in this synaptic transistor configuration. Herein, using a low-cost electrospinning technique combined with an efficient nanowire transfer method, we have mainly fabricated bio-inspired synaptic transistors based on one dimensional InZnO nanowires, which can be effectively tuned by ultraviolet (UV) laser to achieve hour-scale long-memory retention of long-term potentiation (LTP). To trigger the nanowire synapses, a 375 nm UV laser with different pulse numbers and light intensities was used, with corresponding measured electrical signals, such as excitatory post-synaptic currents, paired-pulse facilitation and LTPs. Moreover, we achieved improved hand-written recognition accuracy and obtained a sensing-memory system based on experimental measurements. We believe that this study could provide an opportunity to realize bio-resembled artificial systems with long-time memory capability.

Graphical abstract: Ultraviolet-driven metal oxide semiconductor synapses with improved long-term potentiation

Supplementary files

Article information

Article type
Paper
Submitted
12 Oct 2022
Accepted
05 Dec 2022
First published
06 Dec 2022

J. Mater. Chem. C, 2023,11, 722-729

Ultraviolet-driven metal oxide semiconductor synapses with improved long-term potentiation

S. Xin, Y. Chang, R. Zhou, H. Cong, L. Zheng, Y. Wang, Y. Qin, P. Xu, X. Liu and F. Wang, J. Mater. Chem. C, 2023, 11, 722 DOI: 10.1039/D2TC04340H

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