Issue 39, 2018, Issue in Progress

Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

Abstract

Ultrathin 1T (tetragonal)-TaS2 and monolayer MoS2 heterostructures were prepared to study their phase transition (PT) mechanisms and band structure modulation. The temperature dependency of photoluminescence (PL) and Raman spectra was utilized to study interlayer coupling and band structure. The PL results indicate that the band structure of MoS2/TaS2 heterostructures undergoes a sharp change at 214 K. This is attributed to the PT of 1T-TaS2 from a Mott insulator state to a metastable state. In addition, the temperature dependency of the MoS2/TaS2 Raman spectra illustrates that the phonon vibration of the heterojunction is softened due to the effect of interlayer coupling. The present work could provide an avenue to create material systems with abundant functionalities and physical effects.

Graphical abstract: Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

Article information

Article type
Paper
Submitted
21 Apr 2018
Accepted
05 Jun 2018
First published
14 Jun 2018
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2018,8, 21968-21974

Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

M. Chen, B. Zhou, F. Wang, L. Xu, K. Jiang, L. Shang, Z. Hu and J. Chu, RSC Adv., 2018, 8, 21968 DOI: 10.1039/C8RA03436B

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