Issue 96, 2016, Issue in Progress
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RSC Advances

Strong modification of intrinsic spin Hall effect in FeMn with antiferromagnetic order formation

Y. Kang,ab   Y. S. Chang,b   W. He,b   J. W. Cai*b  and  S. S. Kang*a  

* Corresponding authors

a School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, China
E-mail: skang@sdu.edu.cn

b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
E-mail: jwcai@aphy.iphy.ac.cn

Abstract

FeMn films with and without a Cu seed layer were deposited on Y3Fe5O12 (YIG) substrates, and their inverse spin Hall effect (ISHE) was examined through both spin Seebeck effect and spin pumping. From the ISHE voltage, the spin Hall angle of FeMn in YIG/Cu/FeMn is greatly enhanced with its polarity opposite to that in YIG/FeMn. Anisotropic magnetoresistance measurements on the samples with an additional NiFe layer show that the FeMn layers in YIG/Cu/FeMn and YIG/FeMn are antiferromagnetic and paramagnetic, respectively. The present work demonstrates that the antiferromagnetic order in FeMn alloy intensely influence its intrinsic spin Hall effect.

Graphical abstract: Strong modification of intrinsic spin Hall effect in FeMn with antiferromagnetic order formation

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Article information

DOI
https://doi.org/10.1039/C6RA22256K
Article type
Paper
Submitted
05 Sep 2016
Accepted
26 Sep 2016
First published
26 Sep 2016

RSC Adv., 2016,6, 93491-93495

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Strong modification of intrinsic spin Hall effect in FeMn with antiferromagnetic order formation

Y. Kang, Y. S. Chang, W. He, J. W. Cai and S. S. Kang, RSC Adv., 2016, 6, 93491 DOI: 10.1039/C6RA22256K

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