Issue 8, 2013
From the journal:

Nanoscale

How do the electron beam writing and metal deposition affect the properties of graphene during device fabrication?

Xiaonan Shen,a   Haomin Wanga  and  Ting Yu*abc  

* Corresponding authors

a Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore
E-mail: yuting@ntu.edu.sg

b Department of Physics, Faculty of Science, National University of Singapore, 117542 Singapore, Singapore

c Graphene Research Center, Faculty of Science, National University of Singapore, 117546 Singapore, Singapore

Abstract

Electron beam exposure and metallic contact formation are commonly used processes for fabrication of graphene-based devices. We report a detailed Raman study on the influence of medium energy electron irradiation and metal atoms on defectivity and doping on monolayer and bilayer graphene. It is found that the electron beam could induce disorder into graphene layers mainly by three ways: knocking-off carbon atoms, reaction with substrate and deposition of amorphous carbon. We observe that bilayer graphene exhibits higher stability under e-beam irradiation than monolayer graphene. Our study on the formation process of metallic contacts reveals that evaporation of Ti normally cannot induce any defects into graphene while deposition of Au can introduce a large amount of damage. This work could be valuable for further development of processes in the fabrication of graphene-based devices.

Graphical abstract: How do the electron beam writing and metal deposition affect the properties of graphene during device fabrication?

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Article information

DOI
https://doi.org/10.1039/C3NR33460K
Article type
Paper
Submitted
03 Nov 2012
Accepted
04 Feb 2013
First published
07 Feb 2013

Nanoscale, 2013,5, 3352-3358

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How do the electron beam writing and metal deposition affect the properties of graphene during device fabrication?

X. Shen, H. Wang and T. Yu, Nanoscale, 2013, 5, 3352 DOI: 10.1039/C3NR33460K

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