Issue 4, 2007
From the journal:

Analyst

Direct electrical detection of antigen–antibody binding on diamond and silicon substrates using electrical impedance spectroscopy

Wensha Yang,a   James E. Butler,b   John N. Russell, Jr.b  and  Robert J. Hamers*a  

* Corresponding authors

a Department of Chemistry, 1101 University Avenue, Madison, WI, USA
E-mail: rjhamers@wisc.edu
Fax: +1 608-262-0453
Tel: +1 608-262-6371

b Naval Research Laboratory, 4555 Overlook Ave. S.W., Washington DC, USA

Abstract

The integration of biological molecules with semiconducting materials such as silicon and diamond has great potential for the development of new types of bioelectronic devices, such as biosensors and bioactuators. We have investigated the electrical properties of the antibody–antigen modified diamond and silicon surfaces using electrical impedance spectroscopy (EIS). Frequency dependent measurements at the open-circuit potential show: (a) significant changes in impedance at frequency >104 Hz when the surface immobilized IgG was exposed to anti-IgG, and (b) only little or no change when exposed to anti-IgM. Mott–Schottky measurements at high frequency (200 kHz) show that the impedance is dominated by the space charge layer of the semiconducting substrates. Silicon surfaces modified in a similar manner to the diamond surface are compared; n-type and p-type samples show complementary behavior, as expected for a field effect. We also show it is possible to directly observe antigen–antibody interaction at a fixed frequency in real time, and with no additional labeling.

Graphical abstract: Direct electrical detection of antigen–antibody binding on diamond and silicon substrates using electrical impedance spectroscopy

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Article information

DOI
https://doi.org/10.1039/B612201A
Article type
Paper
Submitted
24 Aug 2006
Accepted
14 Dec 2006
First published
17 Jan 2007

Analyst, 2007,132, 296-306

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Direct electrical detection of antigen–antibody binding on diamond and silicon substrates using electrical impedance spectroscopy

W. Yang, J. E. Butler, J. N. Russell, Jr. and R. J. Hamers, Analyst, 2007, 132, 296 DOI: 10.1039/B612201A

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