Issue 9, 2003
From the journal:

Journal of Materials Chemistry

Observation of a thermal hysteresis loop in the dielectric constant of spin crossover complexes: towards molecular memory devices

Azzedine Bousseksou,*a   Gábor Molnár,a   Philippe Demontb  and  Jérôme Menegottob  

* Corresponding authors

a Laboratoire de Chimie de Coordination, CNRS UPR-8241, 205 Route de Narbonne, Toulouse, France
E-mail: boussek@lcc-toulouse.fr
Fax: +33-5-6155-3003

b Laboratoire de Physique des Polymères-CIRIMAT, CNRS UMR-5085, 118 Route de Narbonne, Toulouse, France

Abstract

Spin crossover materials made of metallo-organic/inorganic molecular complexes present magnetic susceptibility and optical reflectivity hysteresis due to an internal high-spin (HS) to low-spin (LS) cooperative spin transition with potential applications in memory, display and switching devices. Here, we report the first observation of a thermal bistability in the dielectric constant as a consequence of the HS [leftrightharpoons] LS transition. Better than magnetic susceptibility or optical reflectivity, this electrical property allows the effective use of such molecular materials for electronics based memories.

Graphical abstract: Observation of a thermal hysteresis loop in the dielectric constant of spin crossover complexes: towards molecular memory devices

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Article information

DOI
https://doi.org/10.1039/B306638J
Article type
Communication
Submitted
11 Jun 2003
Accepted
03 Jul 2003
First published
09 Jul 2003

J. Mater. Chem., 2003,13, 2069-2071

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Observation of a thermal hysteresis loop in the dielectric constant of spin crossover complexes: towards molecular memory devices

A. Bousseksou, G. Molnár, P. Demont and J. Menegotto, J. Mater. Chem., 2003, 13, 2069 DOI: 10.1039/B306638J

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