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Doping Limits and Growth Thermodynamics of GaSb Crystals

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Abstract

Beside four approaches to the thermodynamics of GaSb-M(=S, Te) solid solutions the doping limits for extremely narrow concentration regions are analysed and ranked in the Cu, Ge, Mn (p-dopants), S, Se, Te (n-dopants) and N, In (isoelectric) groups.

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Authors and Affiliations

  1. Division of Solid-State Physics, Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53, Prague - 6, Czech Republic

    J. Šesták, V. Šestáková & B. Štěpánek

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  1. J. Šesták
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  2. V. Šestáková
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  3. B. Štěpánek
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Šesták, J., Šestáková, V. & Štěpánek, B. Doping Limits and Growth Thermodynamics of GaSb Crystals. Journal of Thermal Analysis and Calorimetry 56, 749–754 (1999). https://doi.org/10.1023/A:1010102105600

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  • DOI: https://doi.org/10.1023/A:1010102105600

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