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Monte Carlo Simulation of Electronic Noise in Semiconductor Materials and Devices Operating under Cyclostationary Conditions

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Abstract

To qualify the feasibility of standard semiconductor materials and Schottky-barrier diodes (SBDs) for THz high-order harmonics generation and extraction, the noise-to-signal ratio is calculated by the Monte Carlo method. Heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonics extraction which are definitively superior to those of bulk materials.

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References

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Authors and Affiliations

  1. Semiconductor Physics Institute, Goshtauto 11, 2600, Vilnius, Lithuania

    P. Shiktorov, E. Starikov & V. Gružinskis

  2. INFM—National Nanotechnology Laboratory, Dipartimento di Ingengeria dell' Innovazione, Universitá di Lecce, Via Arnesano s/n, 73100, Lecce, Italy

    L. Reggiani

  3. Centre d'Electronique et de Micro-optoélectronique de Montpellier (CNRS UMR 5507), Université Montpellier II, 34095, Montpellier Cedex 5, France

    L. Varani & J.C. Vaissière

  4. Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, E-37008, Salamanca, Spain

    S. Pérez & T. González

Authors
  1. P. Shiktorov
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  2. E. Starikov
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  3. V. Gružinskis
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  4. L. Reggiani
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  5. L. Varani
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  6. J.C. Vaissière
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  7. S. Pérez
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  8. T. González
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Shiktorov, P., Starikov, E., Gružinskis, V. et al. Monte Carlo Simulation of Electronic Noise in Semiconductor Materials and Devices Operating under Cyclostationary Conditions. Journal of Computational Electronics 2, 455–458 (2003). https://doi.org/10.1023/B:JCEL.0000011470.42841.76

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011470.42841.76

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