Abstract
Molecular dynamics simulations using empirical potentials have been performed to describe atomic interactions at interfaces created by macroscopic wafer bonding. Misalignment due to relative twist rotation of the wafers influences the bondability of larger areas. Depending on the twist angle the bond energy varies and different defect and atomic arrangements at the interfaces occur. In addition, if very thin wafers are being bonded the free surfaces are modified by the resulting interface relaxation.
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Scheerschmidt, K., Kuhlmann, V. Molecular Dynamics Investigation of Bonded Twist Boundaries. Interface Science 12, 157–163 (2004). https://doi.org/10.1023/B:INTS.0000028646.33929.66
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DOI: https://doi.org/10.1023/B:INTS.0000028646.33929.66