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Resistive Power in CMOS Circuits

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Abstract

Interconnect resistance dissipates a portion of the total transient power in CMOS circuits. Conduction losses increase with larger interconnect resistance. It is shown in this paper that these losses do not add to the total power dissipation of a CMOS circuit through I 2 R losses. Interconnect resistance can, however, increase the short-circuit power of both the driver and load gates.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York, 14627-0231

    Magdy A. El-Moursy & Eby G. Friedman

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  1. Magdy A. El-Moursy
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  2. Eby G. Friedman
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Correspondence to Magdy A. El-Moursy.

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El-Moursy, M.A., Friedman, E.G. Resistive Power in CMOS Circuits. Analog Integrated Circuits and Signal Processing 41, 5–11 (2004). https://doi.org/10.1023/B:ALOG.0000038278.71500.0c

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  • DOI: https://doi.org/10.1023/B:ALOG.0000038278.71500.0c

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