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The growth of thin films of copper chalcogenide films by MOCVD and AACVD using novel single-molecule precursors

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Abstract

Highly oriented crystalline films of copper sulfide and copper selenide have been grown on glass by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) and by aerosol-assisted chemical vapor deposition (AACVD), using the novel air-stable compounds Cu(E2CNMenHex)2]* (where E=S,Se). Thin films of non-stoichiometric cubic CuS and CuSe have been deposited in the temperature range 450–500 °C.

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Authors and Affiliations

  1. Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK

    M. Kemmler, D. J. Otway, Jin-Ho Park & J. R. Walsh

  2. The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK

    M. Lazell, P. O'Brien & Jin-Ho Park

Authors
  1. M. Kemmler
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  2. M. Lazell
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  3. P. O'Brien
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  4. D. J. Otway
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  5. Jin-Ho Park
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  6. J. R. Walsh
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Kemmler, M., Lazell, M., O'Brien, P. et al. The growth of thin films of copper chalcogenide films by MOCVD and AACVD using novel single-molecule precursors. Journal of Materials Science: Materials in Electronics 13, 531–535 (2002). https://doi.org/10.1023/A:1019665428255

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