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Energy Levels of Structural Defects in ZnAs2

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Inorganic Materials Aims and scope

Abstract

Impurity photoconductivity and temperature-dependent Hall effect measurements were used to assess the ionization energies of acceptor levels produced in undoped and Te-doped ZnAs2 single crystals by structural defects: εa (1-4) = 0.08, 0.14, 0.26, and 0.34 eV. The nature of the structural defects responsible for these acceptor levels is discussed.

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Authors and Affiliations

  1. Moscow State University, Moscow, 119899, Russia

    V. A. Morozova & O. G. Koshelev

  2. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    S. F. Marenkin

Authors
  1. V. A. Morozova
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  2. S. F. Marenkin
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  3. O. G. Koshelev
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Morozova, V.A., Marenkin, S.F. & Koshelev, O.G. Energy Levels of Structural Defects in ZnAs2 . Inorganic Materials 38, 325–330 (2002). https://doi.org/10.1023/A:1015137301787

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  • DOI: https://doi.org/10.1023/A:1015137301787

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