Abstract
Tantalum nitride thin films with different thickness are sputtered deposited on silicon dioxide in the Cu/TaN/SiO2/Si multiplayer structure. Using resistivity analyses, X-ray diffraction, scanning electron microscopy and Rutherford backscattering spectroscopy, this work examines the impact of varying layer thickness on the crystal structure, resistivity, intermixing and reactions at the interfaces before and after annealing. The thinner the film thickness of TaN, the severe the reactions at the interface of Cu/TaN and consumed more conductive Cu. All the structures shown similar degradation process, and were found to be stable up to 500°C for 35 min. Accelerated grain growth and agglomeration were also observed after annealing temperature higher than 550°C at all Cu surfaces of the samples.
Similar content being viewed by others
References
S. P. Murarka, Mater. Sci. Eng. R19 (1997) 87.
A. F. Jankowaski, R. M. Bionta and P. C. Gabriele, J. Vac. Sci. Technol. A 7(2) (1988) 210.
E. Kolawa and P. M. Fryer, Appl. Phys. Lett. 57(17) (1990) 1736.
M. Oda, A. Ozawa, S. Ohki and H. Yoshihara, Jpn. J. Appl. Phys. 29(11) (1990) 2616.
R. J. Gutmann, J. M. Steigerwald, L. You, D. T. Price, J. Neirynck, D. J. Duquette and S. P. Muraka, Thin Solid Films 270 (1995) 596.
M. H. Tsai, S. C. Sun, C. E. Tsai, S. H. Chaung and H. T. Chiu, J. Appl. Phys. 79(9) (1996) 6932.
L. A. Clevenger, N. A. Bojarczuk, J. M. E. Happer, C. Cabral Jr., R. G. Schad, F. Cardone and L. Stolt, ibid. 73(1) (1993) 300.
M. Takeyama, A. Noya, T. Sase and A. Ohta, J. Vac. Sci. Technol. B 14(2) (1996) 674.
K. Holloway, P. M. Fryer, C. Cabral Jr., J. M. E. Harper, P. J. Bailey and K. H. Kelleher, J. Appl. Phys. 71(11) (1992) 5433.
K. H. Min, K. C. Chun and K. B. Kim, J. Vac. Sci. Technol. B 14(5) (1996) 3263.
M. T. Wang, Y. C. Lin and M. C. Chen, J. Electrochem. Soc. 145(7) (1998) 2538.
T. Oku, E. Kawakami, M. Uekubo, K. Takahiro, S. Yamaguchi and M. Murakami, Appl. Surf. Sci. 99 (1996) 265.
S. M. Rossnagel and J. Hopwood, J. Vac. Sci. Technol. B 12 (1994) 499.
X. Sun, E. Kolawa, J. S. Chen, J. S. Reid and M. A Nicolet, Thin Solid Films 236(1–2) (1993) 347.
K. Hieber, ibid. 24 (1974) 157.
M. Lane, R. H. Dauskardt, N. Krishna and I. Hashim, J. Mater. Res. 15(1) (2000) 203.
K. Holloway, P. M. Fryer, C. Cabral, J. M. E. Harper, P. J. Bailey and K. H. Kelleher, J. Appl. Phys. 71 (1992) 5433.
Y. K. Lee, Khin maung Latt, Kim Jaehyung and Kangsoo Lee, Journal of Materials Science in Semiconductor Processing, accepted.
P. Chaudhari, J. Vac. Technol. 9 (1990) 520.
H.-J. Lee, K. W. Kwon, C. Ryu and R. Scinlair, Acta Mater. 47(15) (1999) 3965.
C. V. Thompson, Scripta Mater. Sci. 28 (1993) 167.
E. Z. Zielinski, R. P. Vinci and J. C. Bravman, J. Appl. Phys. 76 (1994) 4516.
C. V. Thompson, Annu. Rev. Mater. Sci. 20 (1990) 245.
H. J. Frost, C. V. Thompson and D. T. Walton, Mater. Sci. Forum 94–96 (1992) 543.
P. Chaudhari, J. Vac. Technol. 9 (1990) 520.
R.-M. Keller, W. Sigel, S. P. Baker, O. Kraft and E. Arzt, Mater. Res. Soc. Symp. Proc. 436 (1997) 221.
J. S. Halliday, T. B. Rymer and K. H. R. Wright, Proc. R. Soc. London A 225 (1994) 548.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Latt, K.M., Lee, Y.K., Seng, H.L. et al. Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide. Journal of Materials Science 36, 5845–5851 (2001). https://doi.org/10.1023/A:1013088624226
Issue Date:
DOI: https://doi.org/10.1023/A:1013088624226