Abstract
The structural perfection and homogeneity of Czochralski-grown Sb2Te3and Sb1.96Sn0.04Te3crystals were characterized by transmission electron microscopy and electron probe x-ray microanalysis. The Sb, Sn, and Te core-level and valence-band x-ray photoelectron spectra were measured, and the corresponding binding energies were determined. The effect of Sn doping on the electronic structure and transport properties of the crystals was examined. The crystals were shown to be uniform in Sb : Te ratio and to have a relatively perfect structure. The dislocation density in the crystals was determined by electron microscopy and selective etching. The origin of the moiré patterns observed in electron micrographs was discussed. Sn doping of Sb2Te3was shown to produce no significant shifts of the core levels or changes in the electronic density of states in the valence band.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
Ivanova, L.D., Granatkina, Yu.V., and Sidorov, Yu.A., Anisotropic Electrical Properties of Tin-Doped Antimony Telluride Single Crystal, Neorg. Mater., 1998, vol. 34, no. 1, pp. 34–39 [Inorg. Mater. (Engl. Transl.), vol. 34, no. 1, pp. 26-30].
Horak, J., Lostak, P., and Matyas, M., Point Defects in Sn-Doped Sb2Te3 Single Crystals, Phys. Status Solidi B, 1985, vol. 129, no. 1, pp. 381–386.
Gasenkova, I.V., Zhitinskaya, M.K., Nemov, S.A., and Svechnikova, T.E., Electron-Density Redistribution in Sn-Doped Bi2Te3, Fiz. Tverd. Tela (S.-Peterburg), 1999, vol. 41, no. 11, pp. 1969–1972.
Poretskaya, L.V., Abrikosov, N.Kh., and Glazov, V.M., Liquidus and Subsolidus Phase Relations in the Sb-Te System near the Intermediate Compound, Zh. Tekh. Fiz., 1963, vol. 8, no. 5, pp. 1196–1198.
Ham, R.K., The Determination of Dislocation Densities in Thin Films, Philos. Mag., 1961, vol. 6, no. 69, pp. 1183–1192.
Tsypin, M.I., Kulikova, G.A., Durovina, A.N., et al., Revealing Dislocations in Bismuth Telluride and Antimony Telluride Single Crystals, Izv. Vyssh. Uchebn. Zaved., Fiz., 1973, no. 5, pp. 147–149.
Electron Microscopy of Thin Crystals, Hirsch, P.B. et al., Eds., New York: Plenum, 1965. Translated under the title Elektronnaya mikroskopiya tonkikh kristallov, Moscow: Mir, 1968.
Semiletov, S.A., Electron Diffraction Study of Sublimed Bi-Se and Bi-Te Layers, Tr. Inst. Kristallogr., Akad. Nauk SSSR, 1954, vol. 10, pp. 76–83.
Talybov, A.G., Electron Diffraction Study of SnSb2Te4, Kristallografiya, 1961, vol. 6, no. 1, pp. 49–55.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Gasenkova, I.V., Ivanova, L.D. & Granatkina, Y.V. Structural Defects in Tin-Doped Antimony Telluride Single Crystals. Inorganic Materials 37, 1112–1117 (2001). https://doi.org/10.1023/A:1012536807193
Issue Date:
DOI: https://doi.org/10.1023/A:1012536807193