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Thermochemistry of silicon carbide growth by chemical transport reactions

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Abstract

Chemical Vapour Transport is a well known process widely used for the growth of monocrystals. This paper is a thermodynamic overview of different heterogeneous chemical systems, promising for the growth of silicon carbide by means of chemical transport reactions. The systems are Si-C-Y where Y is oxygen or a chalcogen (S, Se) and Si-C-H-X where X is an halogen (Cl, Br, I). We studied in a first step the gas phase composition obtained from SiC etching with the transporting agent as a function of temperature. In a second step, we report the conditions for the formation of silicon carbide from such a vapour at a different temperature. Finally we discuss optimal conditions of temperatures and thermal gradients required for SiC transport with each systems.

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Authors and Affiliations

  1. Laboratoire des Multimatériaux et Interfaces, UMR CNRS n°5615, Université Claude Bernard Lyon1, 43 bd du 11 novembre 1918, 69622, Villeurbanne Cedex, France

    D. Chaussende, G. Ferro & Y. Monteil

  2. Laboratoire Central de Recherches, Thomson CSF, Domaine de Corbeville, 91404, Orsay Cedex, France

    C. Brylinski & J. Bouix

Authors
  1. D. Chaussende
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  2. G. Ferro
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  3. Y. Monteil
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  4. C. Brylinski
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  5. J. Bouix
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Correspondence to D. Chaussende.

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Chaussende, D., Ferro, G., Monteil, Y. et al. Thermochemistry of silicon carbide growth by chemical transport reactions. Journal of Materials Science 36, 335–342 (2001). https://doi.org/10.1023/A:1004808008339

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