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Evolution of water vapor from indium-tin-oxide thin films fabricated by various deposition processes

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Abstract

Tin-doped In2O3 (indium-tin-oxide) transparent conducting films are widely used as electrodes of liquid crystal displays and low-E windows. In the present study, a systematic TDS study was undertaken for ITO films fabricated by various deposition processes; such as PVD, dip coating and spray deposition. Water vapor was the main gas evolved from the films; gas evolution from the silicon substrate was negligible. The evolution proceeded via two steps at approximately 373 and 473-623 K. The amount of the evolved water was in the order: (dip-coated film)>(PVD films)> (spray-deposited film). This order was identical to that of the film's resistivities.

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Seki, S., Aoyama, T., Sawada, Y. et al. Evolution of water vapor from indium-tin-oxide thin films fabricated by various deposition processes. Journal of Thermal Analysis and Calorimetry 69, 1021–1028 (2002). https://doi.org/10.1023/A:1020649232003

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  • DOI: https://doi.org/10.1023/A:1020649232003

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