Abstract
The oxidation behaviour of a B4C based material was investigated in a dry atmosphere O2(20 vol.%)-CO2(5 vol.%)-He and also in the presence of moisture H2O (2.3 vol%) as boron oxide is very sensitive to water vapour. The mass changes of samples consisting of a chemical vapour deposit of B4C on silicon nitride substrates were continuously monitored in the range 500–1000°C during isothermal experiments of 20 h. The stability of boron oxide formed by oxidation of B4C was also studied in dry and wet atmospheres to explain the kinetic curves. In both atmospheres, oxidation is diffusion controlled at 700 and 800°C and enhanced by water vapour. At 900°C and higher temperatures, boron oxide volatilisation and consumption by reaction with water vapour modifies the properties of the oxide film and the material is no more protected. At 600°C, B4C oxidation is weak but the process remains diffusion controlled in dry conditions as boron oxide volatilisation is negligible. However, in the presence of water vapour, B2O3 consumption rate is significant and mass losses corresponding to this consumption and to the combustion of the excess carbon are observed.
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Viricelle, J.P., Goursat, P. & Bahloul-Hourlier, D. Oxidation Behaviour of A Boron Carbide Based Material in Dry and Wet Oxygen. Journal of Thermal Analysis and Calorimetry 63, 507–515 (2000). https://doi.org/10.1023/A:1010133703284
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DOI: https://doi.org/10.1023/A:1010133703284