Abstract
The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to the layers of a Ga1−xAlxAs p-n junction incorporating a single GaAs quantum well on the n-side of the junction plane. Non-equilibrium electrons are injected into the quantum well via tunnelling from the n-layer. In order to preserve the charge neutrality in the depletion region, the junction undergoes a self-induced internal biasing. As a result the built-in potential on the p-side is reduced and hence the injection of non- equilibrium holes into the quantum well in the active region is enhanced. The work presented here shows that a distributed Bragg reflector grown below the active region of the HELLISH device increases the emitted light intensity by two orders of magnitude and reduces the emission line-width by about a factor of 3 in comparison with the original HELLISH-1 structure. Therefore, the device can be operated as an ultrabright emitter with higher spectral purity.
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O'brien, A., Balkan, N., Boland-Thoms, A. et al. Super-radiant surface emission from a quasi-cavity hot electron light emitter. Optical and Quantum Electronics 31, 183–190 (1999). https://doi.org/10.1023/A:1006961123975
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DOI: https://doi.org/10.1023/A:1006961123975