Abstract
Fine-grained silicon carbide ceramics with an average grain size of ∼140 nm or smaller were prepared by low-temperature hot-pressing of very fine β-SiC powders using Al2O3-Y2O3-CaO (AYC) or Y-Mg-Si-Al-O-N glass (ON) as sintering additives. The microstructure stability of the resulting fine-grained SiC ceramics was investigated by annealing at 1850°C and by evaluating quantitatively the grain growth behavior using image analysis. The β → α phase transformation of SiC in AYC-SiC was responsible for the accelerated abnormal grain growth of platelet-shaped grains. In contrast, the β → α phase transformation in ON-SiC was suppressed, which resulted in a very stable microstructure.
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Lee, YI., Kim, YW. & Mitomo, M. Microstructure stability of fine-grained silicon carbide ceramics during annealing. Journal of Materials Science 39, 3613–3617 (2004). https://doi.org/10.1023/B:JMSC.0000030713.40220.07
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DOI: https://doi.org/10.1023/B:JMSC.0000030713.40220.07