Abstract
Silicon carbonitride films were synthesized from new volatile precursors by plasma-enhanced chemical vapor deposition. Based on a detailed study of the morphology of film surfaces, it was found that the layer material was an amorphous matrix with inclusions of nanosized crystals. Calculation of the structure of the crystalline phase from synchrotron X-ray diffraction patterns demonstrated that the entire set of the diffraction peaks detected is indexed by a tetragonal structure with the lattice parameters a = 9.6 Å and c = 6.4 Å. This is consistent with the fact that the carbon 1s and nitrogen 1s core level X-ray photoelectron spectra exhibited only sp 3 bonding, which was expected for superhard carbon nitride phases.
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Smirnova, T.P., Badalyan, A.M., Borisov, V.O. et al. Plasma-Enhanced Chemical Vapor Deposition of Silicon Carbonitride Films from Volatile Silyl Derivatives of 1,1-Dimethylhydrazine. High Energy Chemistry 37, 303–309 (2003). https://doi.org/10.1023/A:1025700829352
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DOI: https://doi.org/10.1023/A:1025700829352