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Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP

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Abstract

This paper reports a systematic study of the effects of the cracker cell temperature and the input V/III ratio on the growth of GaInP. GaInP epilayers were grown on GaAs (001) substrates using triisopropylgallium, ethyldimethylindium and tertiarybutylphosphine by chemical beam epitaxy. The surface morphology, growth rate, low temperature (15 K) and room temperature (300 K) photoluminescence (PL) were studied as a function of the cracker cell temperature and input V/III ratio. At an optimum cracker cell temperature and input V/III ratio, the PL spectrum showed only a strong band edge peak with a full width at half maximum of 10.8 meV.

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Authors and Affiliations

  1. LP1, System IC Division, Hynix Semiconductor Inc., Cheongju-Si, Choongbook, 361-725, Korea

    H. H. Ryu

  2. Department of Materials Engineering, Pukyong National University, San 100, Yong-Dang Dong, Nam-Gu, Pusan, 608-739, Korea

    H. L. Choi

  3. Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT, 84112, USA

    L. P. Sadwick

Authors
  1. H. H. Ryu
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  2. H. L. Choi
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  3. L. P. Sadwick
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Ryu, H.H., Choi, H.L. & Sadwick, L.P. Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP. Journal of Materials Science 38, 3663–3668 (2003). https://doi.org/10.1023/A:1025693818147

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