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A WENO-Solver for the 1D Non-Stationary Boltzmann–Poisson System for Semiconductor Devices

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Abstract

In this work we present preliminary results of a high order WENO scheme applied to a new formulation of the Boltzmann equation (BTE) describing electron transport in semiconductor devices with a spherical coordinate system for the phase velocity space. The problem is two dimensional in the phase velocity space and one dimensional in the physical space, plus the time variable driving to steady states. The new formulation avoids the singularity due to the spherical coordinate system.

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Authors and Affiliations

  1. Departamento de Matemática Aplicada, Universidad de Granada, 18071, Granada, Spain

    José A. Carrillo

  2. Department of Mathematics, University of Texas at Austin, USA

    Irene M. Gamba

  3. Dipartimento di Matematica e Informatica, Universita' di Catania, Catania, Italy

    Armando Majorana

  4. Division of Applied Mathematics, Brown University, Providence, RI, 02912, USA

    Chi-Wang Shu

Authors
  1. José A. Carrillo
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  2. Irene M. Gamba
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  3. Armando Majorana
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  4. Chi-Wang Shu
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Correspondence to Chi-Wang Shu.

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Carrillo, J.A., Gamba, I.M., Majorana, A. et al. A WENO-Solver for the 1D Non-Stationary Boltzmann–Poisson System for Semiconductor Devices. Journal of Computational Electronics 1, 365–370 (2002). https://doi.org/10.1023/A:1020751624960

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  • DOI: https://doi.org/10.1023/A:1020751624960

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