Abstract
Ultrafast gain dynamics in quantum-dot optical amplifiers has been studied by using the pump-probe and four-wave mixing (FWM) techniques. It was found that there are at least three nonlinear processes, which are attributed to carrier relaxation to the ground states, phonon scattering, and carrier capture from the wetting layers into the quantum dots (QDs). The relevant time constants were evaluated to be ∼90 fs, ∼260 fs, and ∼2 ps, respectively, under a 50 mA bias condition. The compressed gain recovered to 3% of its initial value in 4 ps, and no recovery component slower than 2 ps could be seen in the temporal range tested. This is quite different from the feature in quantum wells, where a very slow component (> 50 ps) exists. This suggests a possibility of enhancing the operation speed of semiconductor optical amplifiers by using QDs as an active layer. The third-order optical susceptibility (χ(3)) has been evaluated by means of both nonlinear transmission and FWM experiments. The results show that the nonlinearity expressed by χ(3)/g 0 is quite similar to that of bulk and quantum wells, which can be explained by the similar relaxation times.
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Akiyama, T., Kuwatsuka, H., Simoyama, T. et al. Ultrafast nonlinear processes in quantum-dot optical amplifiers. Optical and Quantum Electronics 33, 927–938 (2001). https://doi.org/10.1023/A:1017574407693
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DOI: https://doi.org/10.1023/A:1017574407693