Abstract
Procedures were developed for the direct gas-chromatographic determination of impurities of organochlorine substances, chlorosilane, and alkylchlorosilane in silicon tetrachloride and for the gas-chromatographic analysis with matrix subtraction by preliminary hydrolysis of silicon tetrachloride and subsequent extraction of organochlorine impurities with an organic solvent. It was found that the major impurities in high-purity silicon tetrachloride obtained by the rectification of the by-product in the production of trichlorosilane are trichlorosilane, methyltrichlorosilane, methyldichlorosilane, chloroform, and carbon tetrachloride. Detection limits of impurities are 10–5–10–7wt %, which is lower than those reported in the literature by 1–2 orders of magnitude.
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Krylov, V.A., Salganskii, Y.M. & Chernova, O.Y. Highly Sensitive Determination of Carbon- and Hydrogen-Containing Impurities in Silicon Tetrachloride by Gas Chromatography. Journal of Analytical Chemistry 56, 844–849 (2001). https://doi.org/10.1023/A:1016764514034
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DOI: https://doi.org/10.1023/A:1016764514034