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Stress Measurement Technique to Monitor Porous Silicon Processing

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Abstract

Macroscopic stress measurements are used to monitor Porous Silicon processing. Silicon wafer of 1Ω cm resistivity, n-type and 〈1 0 0〉 orientation were used as starting material. Porous Silicon layers with a porosity of 57% and a thickness of 85 μm, fabricated by electrochemical anodisation, were differently dried, then the evolution of the wafer deflection has been followed with storage time in air. Thermal treatments both in inert and oxidant atmosphere have been performed up to 1000°C. The stress behaviour vs. temperature allows to estimate the hydrogen desorption activation energy.

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Authors and Affiliations

  1. CR-ENEA, Loc. Granatello, 80055, Portici, Italy

    G. Di Francia, V. La Ferrara, L. Lancellotti & L. Quercia

Authors
  1. G. Di Francia
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  2. V. La Ferrara
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  3. L. Lancellotti
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  4. L. Quercia
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Di Francia, G., La Ferrara, V., Lancellotti, L. et al. Stress Measurement Technique to Monitor Porous Silicon Processing. Journal of Porous Materials 7, 319–321 (2000). https://doi.org/10.1023/A:1009621206749

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