Abstract
The necessity of in situmonitoring plasma processes in present-day microelectronics stems from the fact that they must provide high precision. New-generation micro- and nanodevices, which will have sharp interfaces and atomic-level sizes, demand continuous monitoring of process stages. Preference should be given to built-in monitoring facilities, which exploit highly sensitive physical effects and do not disturb particle fluxes from a plasma to a substrate. Part I covers advanced diagnostic and monitoring methods, as applied to plasmochemical processes used in microelectronics, with emphasis to optical spectral techniques. They are based on in-process measuring volume (nonlocal) parameters of a reactive plasma. Processes monitored may include etching and deposition of semiconductor, metal, and insulating layers, as well as resist stripping and surface cleaning.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
Valiev, K.A. and Orlikovskii, A.A., New-Generation Chips for Microelectronics: Silicon Nanotransistor Keeps Its Positions, Elektronika: Nauka Tekhnol. Biznes, 2000, no. 3, pp. 46–49.
The International Technology Roadmap for Semiconductors Technology Needs, 1999 ed.
Orlikovskii, A.A., Plasma Processes in Micro-and Nanoelectronics. Part 1: Reactive Ion Etching, Mikroelektronika, 1999, vol. 28, no. 5, pp. 344–362.
Zhu, X.-D., Hu, M., Zhan, R.-J., Wen, X.-H., and Zhou, H.-Y., Diagnostics of Plasma Emission Spectra during Electron Assisted Chemical Vapor Deposition of Diamond Films, Phys. Plasmas, 1998, vol. 5, no. 5, pp. 1541–1544.
Teii, K., Diagnostics of the Diamond Depositing Inductively Coupled Plasma by Electrostatic Probes and Optical Emission Spectroscopy, J. Vac. Sci. Technol. A, 1999, vol. 17, no. 1, pp. 138–143.
Flamm, D.L., Donnely, V.M., and Mucha, J.A., The Reaction of Fluorine Atoms with Silicon, J. Appl. Phys., 1981, vol. 52, no. 5, pp. 3633–3639.
Baryshev, Yu.P., Ershov, A.P., Isaev, K.Sh., Kalinin, A.V., Orlikovskii, A.A., Rudenko, K.V., Semenenko, V.N., Sukhanov, Ya.N., and Piskun, N.Yu., Monitoring of SiO2/Si Plasma Etching and End-Point Detection, Mikroelektronika, 1996, vol. 25, no. 5, pp. 373–379.
McNevin, S.C. and Cerulo, M., Diagnosing SiO2 Contact Etch Stop with Optical Emission, J. Vac. Sci. Technol., A, 1997, vol. 15, no. 3, pp. 659–663.
Coburn, J.W. and Chen, M., Optical Emission Spectroscopy of Reactive Plasmas: A Method for Correlating Emission Intensities to Reactive Particle Density, J. Appl. Phys., 1980, vol. 51, no. 6, pp. 3134–3136.
Granier, A., Chereau, D., Henda, K., Safari, R., and Leprince, P., Validity of Actinometry to Monitor Oxygen Atom Concentration in Microwave Discharges Created by Surface Wave in O2–N Mixtures, J. Appl. Phys., 1994, vol. 75, no. 6, pp. 104–114.
Ibbotson, D.E., Flamm, D.L., and Donnely, V.M., Crystallographic Etching of GaAs with Bromine and Chlorine Plasmas, J. Appl. Phys., 1983, vol. 54, no. 10, pp. 5974–5981.
Gottscho, R.A., Davis, G.P., and Burton, R.H., Spatially Resolved Laser-Induced Fluorescence and Optical Emission Spectroscopy of Carbon Tetrachloride Glow Discharges, Plasma Chem. Plasma Process., 1983, vol. 3, no. 2, pp. 193–218.
Gottscho, R.A. and Donnely, V.M., Optical Emission Actinometry and Spectral Line Shapes in RF Glow Discharges, J. Appl. Phys., 1984, vol. 56, no. 2, pp. 245–262.
Jenq, J.S., Ding, J., Taylor, J.W., and Hershkowitz, N., Absolute Fluorine Atom Concentrations in RIE and ECR CF4 Plasmas Measured by Actinometry, Plasma Sources Sci. Technol., 1994, vol. 3, p. 154.
Shogun, V., Tyablikov, A., Shelyhmanov, E., Abachev, M., Sharf, W., and Wallendorf, T., Application of an Acousto—Optic Spectrometer for Plasma Etching Process Quality Control, Surf. Coat. Technol., 1995, vols. 74–75, pp. 571–574.
Rudenko, K.V., Orlikovsky, A.A., and Roeder, G., Monitoring of the Poly-Si/SiO2/Si Plasma Etching by the Optical Emission Actinometry, Tr. Fiz.-Tekn. Inst. Akad. Nauk, 2000, vol. 16, pp. 32–37.
Rudenko, K.V., Orlikovskii, A.A., and Roeder, G., Actinometric Control of Plasma Etching of Poly-Si/SiO2/Si Structures: Potentialities and Limitations of the Method, "Mikro-i nanoelektronika (Proc. Conf. on Micro-and Nanoelectronics), Zvenigorod, 1998, pp. O3–5.
Malyshev, M.V. and Donnely, V.M., Determination of Electron Temperature in Plasmas by Multiple Rare Gas Optical Emission and Implication for Advanced Actinometry, J. Vac. Sci. Technol., A, 1997, vol. 15, no. 3, pp. 550–558.
Malyshev, M.V., Fuller, N.C., Bogart, K.H.A., and Donnely, V.M., Laser-Induced Fluorescence and Langmuir Probe Determination of Cl2+ and C+ Absolute Densities in Transformer-Coupled Chlorine Plasmas, Appl. Phys. Lett., 1999, vol. 74, no. 12, pp. 1666–1668.
Steffens, K.L. and Sobolewski, M.A., Planar Laser-Induced Fluorescence of CF2 in O2/CF4 and O2/C2F6 Chamber Cleaning Plasmas: Spatial Uniformity and Comparison to Electrical Measurements, J. Vac. Sci. Technol., A, 1999, vol. 17, no. 2, pp. 517–527.
Itabashi, N., Kato, K., Nishiwaki, N., Goto, T., Matsuda, A., Yamada, C., and Hirota, E., Spatial Distribution of SiH3 Radicals in RF Silane Plasma, Jpn. J. Appl. Phys., 1990, vol. 29, part 2, no. 3, pp. L505-L507.
Takanashi, K., Hori, M., Maruyama, K., Kishimoto, S., and Goto, T., Measurements of the CF, CF2, and CF3 Radicals in CHF3 Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 1993, vol. 32, no. 5A, pp. L694-L697.
Miyata, K., Hori, M., and Goto, T., CFx (x = 1–3) Radical Densities during Si, SiO2, and Si3N4 Etching Employing Electron Cyclotron Resonance CHF3 Plasma, J. Vac. Sci. Technol., A, 1997, vol. 15, no. 3, pp. 568–572.
Vanderbercq, A.C., Wautelet, M., Dauchot, J.P., Hecq, M., Pointu, A.-M., and Ricard, A., Diagnostics of Inductively Amplified Magnetron Discharges by Optical Emission, Absorption Spectroscopy, and Langmuir Probe Measurements, J. Appl. Phys., 1998, vol. 84, no. 1, pp. 100–106.
Kawai, Y., Sasaki, K., and Kadota, K., Comparison of Fluorine Atom Density Measured by Actinometry and Vacuum Ultraviolet Absorption Spectroscopy, Jpn. J. Appl. Phys., 1997, vol. 36, part 2, no. 9A/B, pp. L1261-L1264.
Tachibana, K. and Kamisugi, H., Vacuum-Ultraviolet Laser Absorption Spectroscopy for Absolute Measurement of Fluorine Atom Density in Fluorocarbon Plasmas, Appl. Phys. Lett., 1999, vol. 74, no. 16, pp. 2390–2392.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Orlikovskii, A.A., Rudenko, K.V. In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospects. Part I.. Russian Microelectronics 30, 69–87 (2001). https://doi.org/10.1023/A:1009430025956
Issue Date:
DOI: https://doi.org/10.1023/A:1009430025956