Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-19T02:43:57.873Z Has data issue: false hasContentIssue false
  • English
  • Français

Performance of a behavioral model with long-term memory effects

Published online by Cambridge University Press:  23 April 2013

Carlos Crespo-Cadenas ,
Javier Reina-Tosina  and
María J. Madero-Ayora
Carlos Crespo-Cadenas*
Affiliation:
Department of Signal Theory and Communications, Escuela Técnica Superior de Ingeniería, University of Seville, Camino de los Descubrimientos s/n, Seville, 41092, Spain. Phone: +34 954487336
Javier Reina-Tosina
Affiliation:
Department of Signal Theory and Communications, Escuela Técnica Superior de Ingeniería, University of Seville, Camino de los Descubrimientos s/n, Seville, 41092, Spain. Phone: +34 954487336
María J. Madero-Ayora
Affiliation:
Department of Signal Theory and Communications, Escuela Técnica Superior de Ingeniería, University of Seville, Camino de los Descubrimientos s/n, Seville, 41092, Spain. Phone: +34 954487336
*
Corresponding author: C. Crespo-Cadenas Email: ccrespo@us.es
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper presents a new behavioral model for power amplifiers that accomplishes the capture of nonlinear low-frequency memory effects with reduced complexity and superior precision. It has been extensively evaluated with a commercial amplifier using wideband code-division multiple-access (WCDMA)-like modulated data with symbol rates in the range of 2 ksym/s to 1 Msym/s, and it is shown that the first dynamic reduction of the proposed model is successfully compared with other highly efficient methods in terms of complexity and generalization capacity.

Keywords

ModelingSimulation and characterizations of devices and circuitsPower amplifiers and linearizers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Issue 4 , August 2013 , pp. 447 - 452
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Pedro, J.C.; Maas, S.A.: A comparative overview of microwave and wireless power amplifier behavioral approaches. IEEE Trans. Microw. Theory Tech., 53 (2005), 1150–1163.Google Scholar
[2]Morgan, D.R.; Ma, Z.; Kim, J.; Zierdt, M.G.; Pastalan, J.: A generalized memory polynomial model for digital predistortion of RF power amplifiers. IEEE Trans. Signal Process., 54 (2006), 3852–3860.Google Scholar
[3]Zhu, A.; Dooley, J.; Brazil, T.J.: Simplified Volterra series based behavioral modeling of RF power amplifiers using deviation-reduction, in IEEE MTT-S Int. Microwave Symp. Digest., San Francisco, CA, 2006, 1113–1116.CrossRefGoogle Scholar
[4]Zhu, A.; Pedro, J.C.; Brazil, T.J.: Dynamic deviation reduction-based Volterra behavioral modeling of RF power amplifiers. IEEE Trans. Microw. Theory Tech., 54 (2006), 4323–4332.Google Scholar
[5]Crespo-Cadenas, C.; Reina-Tosina, J.; Madero-Ayora, M.J.: Volterra behavioral model for wideband RF amplifiers. IEEE Trans. Microw. Theory Tech., 55 (2007), 449–457.Google Scholar
[6]Cunha, T.R.; Pedro, J.C.; Cabral, P.M.: Design of a power-amplifier feed-forward RF model with physical knowledge considerations. IEEE Trans. Microw. Theory Tech., 55 (2007), 2747–2756.Google Scholar
[7]Crespo-Cadenas, C.; Reina-Tosina, J.; Madero-Ayora, M.J.: An equivalent circuit-based approach to behavioral modeling of long-term memory effects in wideband amplifiers. Microw. Opt. Technol. Lett., 53 (2011), 2278–2281.CrossRefGoogle Scholar
[8]Crespo-Cadenas, C.; Reina-Tosina, J.; Madero-Ayora, M.J.: Study of a power amplifier behavioral model with nonlinear thermal effects, in Proc. 40th European Microwave Conf., Paris, France, 2010, 1138–1141.Google Scholar
[9]Minasian, R.A.: Intermodulation distortion analysis of MESFET amplifiers using the Volterra series representation. IEEE Trans. Microw. Theory Tech., 28 (1980), 1–8.Google Scholar
[10]Reina-Tosina, J.; Crespo-Cadenas, C.; Madero-Ayora, M.J.: A compact Volterra model for power amplifiers with memory, in IEEE MTT-S Int. Microwave Symp. Digest, Boston, MA, 2009, 1585–1588.Google Scholar
[11]Ding, L.; Zhou, G.T.: Effects of even-order nonlinear terms on power amplifier modeling and predistortion linearization. IEEE Trans. Veh. Technol., 53 (2004), 156–162.Google Scholar
[12]Lima, E.G.; Cunha, T.R.; Pirola, M.; Pedro, J.C.: Baseband derived Volterra series for power amplifier modeling, in IEEE MTT-S Int. Microwave Symp. Digest, Boston, MA, 2009, 1361–1364.CrossRefGoogle Scholar
[13]Madero-Ayora, M.J. et al. : Baseband digital predistortion of a 10 W GaN power amplifier, in Proc. 41st European Microwave Conf., Manchester, UK, 2011, 341–344.Google Scholar